Semiconductor device

ABSTRACT

A semiconductor device is provided. The semiconductor device includes a field insulating film on a substrate, a first fin type pattern which is formed on the substrate and protrudes upward from an upper surface of the field insulating film, and a gate electrode which intersects with the first fin type pattern on the field insulating film and includes a first portion and a second portion, the first portion being located on one side of the first fin type pattern and including a first terminal end of the gate electrode, and the second portion being located on the other side of the first fin type pattern, wherein a height from the substrate to a lowest part of the first portion is different from a height from the substrate to a lowest part of the second portion.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation of U.S. application Ser. No.16/189,296, filed on Nov. 13, 2018, which is a continuation of U.S.patent application Ser. No. 14/974,805, filed Dec. 18, 2015, issued asU.S. Pat. No. 10,157,917 on Dec. 18, 2018 which claims priority fromKorean Patent Application No. 10-2015-0035702 filed Mar. 16, 2015 in theKorean Intellectual Property Office, the contents of each of which arehereby incorporated herein by reference in their entirety.

BACKGROUND 1. Technical Field

The present inventive concept relates to a semiconductor device.

2. Description of the Related Art

As one of scaling techniques for increasing the density of asemiconductor device, a multi-gate transistor in which a fin-shapedsilicon body is formed on a substrate and a gate is formed on a surfaceof the silicon body has been suggested.

Since such a multi-gate transistor uses a three-dimensional channel, itis easily scaled. Further, even if a gate length of the multi-gatetransistor is not increased, it is possible to improve the currentcontrol capability. Furthermore, it is possible to effectively suppressa short channel effect (SCE) in which the potential of a channel regionis influenced by a drain voltage.

SUMMARY

Aspects of the present inventive concept provide a semiconductor devicehaving improved operating characteristics.

Aspects of the present inventive concept are not restricted to those setforth herein. Other aspects of the present inventive concept that havenot been mentioned will be clearly understood by those skilled in theart from the following description.

According to an aspect of the present inventive concept, there isprovided a semiconductor device comprising a field insulating film on asubstrate, a first fin type pattern which is formed on the substrate andprotrudes upward from an upper surface of the field insulating film, anda gate electrode which intersects with the first fin type pattern on thefield insulating film and includes a first portion and a second portion,the first portion being located on one side of the first fin typepattern and including a first terminal end of the gate electrode, andthe second portion being located on the other side of the first fin typepattern, wherein a height from the substrate to a lowest part of thefirst portion is different from a height from the substrate to a lowestpart of the second portion.

In some embodiments of the present inventive concept, the height fromthe substrate to the lowest part of the first portion is higher than theheight from the substrate to the lowest part of the second portion.

In some embodiments of the present inventive concept, a thickness froman upper surface of the gate electrode to the lowest part of the secondportion is thicker than a thickness from the upper surface of the gateelectrode to the lowest part of the first portion.

In some embodiments of the present inventive concept, the semiconductordevice may further comprise a trench which defines the first fin typepattern, and a height from a bottom surface of the trench to the lowestpart of the first portion is higher than a height from the bottomsurface of the trench to the lowest part of the second portion.

In some embodiments of the present inventive concept, the semiconductordevice may further comprise a gate insulating film formed along aprofile of the first fin type pattern between the gate electrode and thesubstrate. The gate insulating film between the second portion and thesubstrate is in contact with the field insulating film, and the gateinsulating film between the first portion and the substrate is not incontact with the field insulating film.

In some embodiments of the present inventive concept, the semiconductordevice may further comprise an interlayer insulating film on the fieldinsulating film, the gate insulating film is formed between theinterlayer insulating film and the gate electrode, and the gateinsulating film is in contact with the interlayer insulating film in thefirst terminal end.

In some embodiments of the present inventive concept, the semiconductordevice may further comprise a second fin type pattern which intersectswith the gate electrode, the gate electrode includes a third portion, afourth portion, and a second terminal end corresponding to the firstterminal end, the third portion is disposed between the first fin typepattern and the second fin type pattern, and the fourth portion includesthe second terminal end of the gate electrode.

In some embodiments of the present inventive concept, a height from thesubstrate to a lowest part of the third portion is substantially thesame as a height from the substrate to a lowest part of the fourthportion.

In some embodiments of the present inventive concept, the device mayfurther comprise a gate insulating film formed along a profile of thesecond fin type pattern between the gate electrode and the substrate.The gate insulating film between the third portion and the substrate andbetween the fourth portion and the substrate is in contact with thefield insulating film.

In some embodiments of the present inventive concept, a thickness of thefourth portion is different from a thickness of the first portion.

In some embodiments of the present inventive concept, the second portionis disposed between the first fin type pattern and the second fin typepattern.

In some embodiments of the present inventive concept, the semiconductordevice may further comprise an interlayer insulating film on the fieldinsulating film, and a spacer formed between the interlayer insulatingfilm and the first terminal end of the gate electrode.

In some embodiments of the present inventive concept, the first fin typepattern extends in a first direction, and the gate electrode extends ina second direction different from the first direction, the spacer isformed along the periphery of the gate electrode, and a thickness of thespacer formed on a sidewall of the gate electrode extending in thesecond direction is thicker than a thickness of the spacer formedbetween the interlayer insulating film and the first terminal end of thegate electrode.

In some embodiments of the present inventive concept, the spacer extendsto the upper surface of the field insulating film along the sidewall ofthe first fin type pattern.

In some embodiments of the present inventive concept, the first fin typepattern extends in a first direction, and the gate electrode extends ina second direction different from the first direction, and an overlapwidth of the first fin type pattern and the gate electrode is narrowerthan a width in the first direction of the gate electrode.

According to another aspect of the present inventive concept, there isprovided a semiconductor device comprising a field insulating film on asubstrate, first and second fin type patterns which are formed on thesubstrate so as to be closest to each other and protrude upward from anupper surface of the field insulating film, respectively, a first gateelectrode which intersects with the first fin type pattern on the fieldinsulating film and includes a first portion and a second portion, thefirst portion and the second portion being placed with the fin typepattern interposed therebetween, and the first portion including a firstterminal end of the first gate electrode, and a second gate electrodewhich intersects with the second fin type pattern on the fieldinsulating film and includes a third portion and a fourth portion, thethird portion and the fourth portion being placed with the second fintype pattern interposed therebetween, and the third portion including asecond terminal end of the second gate electrode facing the firstterminal end of the first gate electrode, wherein a height from thesubstrate to a lowest part of the first portion is different from aheight from the substrate to a lowest part of the second portion.

In some embodiments of the present inventive concept, the height fromthe substrate to the lowest part of the first portion is higher than theheight from the substrate to the lowest part of the second portion.

In some embodiments of the present inventive concept, a height from thesubstrate to a lowest part of the third portion is substantially thesame as a height from the substrate to a lowest part of the fourthportion.

In some embodiments of the present inventive concept, a height from thesubstrate to the lowest part of the first portion is higher than aheight from the substrate to the lowest part of the third portion.

In some embodiments of the present inventive concept, the height fromthe substrate to the lowest part of the first portion is different fromthe height from the substrate to the lowest part of the third portion.

In some embodiments of the present inventive concept, the height fromthe substrate to the lowest part of the third portion is higher than theheight from the substrate to the lowest part of the fourth portion.

In some embodiments of the present inventive concept, the height fromthe substrate to the lowest part of the first portion is higher than theheight from the substrate to the lowest part of the second portion.

In some embodiments of the present inventive concept, the first fin typepattern and the second fin type pattern are formed in a SRAM region.

In some embodiments of the present inventive concept, the semiconductordevice may further comprise a trench that defines the first fin typepattern and the second fin type pattern. The height from the bottomsurface of the trench to the lowest part of the first portion is higherthan the height from the bottom surface of the trench to the lowest partof the second portion.

In some embodiments of the present inventive concept, the fin typepattern is not disposed between the first fin type pattern and thesecond fin type pattern.

According to still another aspect of the present inventive concept,there is provided a semiconductor device comprising a fin type patternwhich includes a lower part and an upper part on a substrate, the fintype pattern including a first sidewall and a second sidewall facingeach other, a field insulating film which is in contact with the lowerpart of the fin type pattern on the substrate and is non in contact withthe upper part of the fin type pattern, and a gate electrode whichintersects with the fin type pattern, and includes a first portion and asecond portion, the first portion being located on the first sidewall ofthe fin type pattern, and the second portion being located on the secondsidewall of the fin type pattern, wherein the first portion covers thewhole first sidewall of the upper part of the fin type pattern whichoverlaps the gate electrode, and the second portion covers a part of thesecond sidewall of the upper part of the fin type pattern which overlapsthe gate electrode.

In some embodiments of the present inventive concept, the second portionincludes a terminal end of the gate electrode.

In some embodiments of the present inventive concept, the semiconductordevice may further comprise an interlayer insulating film on the fieldinsulating film. A part of the interlayer insulating film is interposedbetween the second portion and the field insulating film, and theinterlayer insulating film is not interposed between the first portionand the field insulating film.

In some embodiments of the present inventive concept, the semiconductormay further comprise a high-dielectric constant gate insulating filmformed along the profile of the fin type pattern between the fin typepattern and the gate electrode. The high-dielectric constant gateinsulating film extends along the whole first sidewall of the upper partof the fin type pattern, and extends along a part of the second sidewallof the upper part of the fin type pattern.

According to still another aspect of the present inventive concept,there is provided a semiconductor device comprising a fin type patternon a substrate, an insulating film which is formed on the substrate andincludes a trench intersecting with the fin type pattern, a depth of afirst portion of the trench on one side of the fin type pattern beingdifferent from a depth of a second portion of the trench on the otherside of the fin type pattern, and a gate electrode which intersects withthe fin type pattern and fills the trench.

In some embodiments of the present inventive concept, the semiconductordevice may further comprise a gate insulating film formed along asidewall and a bottom surface of the trench, the gate electrode isformed on the gate insulating film.

In some embodiments of the present inventive concept, the insulatingfilm includes a field insulating film and an interlayer insulating filmthat are sequentially formed on a substrate, and the trench is formed inthe interlayer insulating film.

In some embodiments of the present inventive concept, a depth of thefirst portion of the trench is shallower than a depth of the secondportion of the trench, and a bottom surface of the second portion of thetrench is defined by an upper surface of the field insulating film.

In some embodiments of the present inventive concept, the gate electrodeformed by filling the first portion of the trench includes a terminalend of the gate electrode.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other aspects and features of the present inventiveconcept will become more apparent by describing in detail exemplaryembodiments thereof with reference to the attached drawings, in which:

FIG. 1 is a layout diagram for explaining a semiconductor deviceaccording to a first embodiment of the present inventive concept;

FIG. 2 is a cross-sectional view taken along a line A-A of FIG. 1;

FIG. 3 is a cross-sectional view taken along a line B-B of FIG. 1;

FIG. 4 is a cross-sectional view illustrating a region P of FIG. 1 takenalong the line B-B;

FIG. 5 is a diagram illustrating a configuration except a first gateelectrode or the like in FIG. 3;

FIG. 6 is a diagram for explaining a semiconductor device according to asecond embodiment of the present inventive concept;

FIGS. 7 and 8 are diagrams for explaining a semiconductor deviceaccording to a third embodiment of the present inventive concept;

FIG. 9 is a layout diagram for explaining a semiconductor deviceaccording to a fourth embodiment of the present inventive concept;

FIG. 10 is a cross-sectional view taken along a line A-A in FIG. 9;

FIG. 11 is a layout diagram for explaining a semiconductor deviceaccording to a fifth embodiment of the present inventive concept;

FIG. 12 is a cross-sectional view taken a long a line D-D of FIG. 11;

FIG. 13 is a diagram for explaining a semiconductor device according toa sixth embodiment of the present inventive concept;

FIG. 14 is a diagram for explaining a semiconductor device according toa seventh embodiment of the present inventive concept;

FIG. 15 is a circuit diagram for explaining a semiconductor deviceaccording to an eighth embodiment of the present inventive concept;

FIG. 16 is a layout diagram of the semiconductor device of FIG. 15;

FIG. 17 is a block diagram of a SoC system including the semiconductordevice according to the embodiments of the present inventive concept;

FIG. 18 is a block diagram of an electronic system including thesemiconductor device according to the embodiments of the presentinventive concept; and

FIGS. 19 to 21 are exemplary semiconductor systems to which thesemiconductor device according to the embodiments of the presentinventive concept can be applied.

DETAILED DESCRIPTION OF THE EMBODIMENTS

Advantages and features of the present inventive concept and methods ofaccomplishing the same may be understood more readily by reference tothe following detailed description of preferred embodiments and theaccompanying drawings. The present inventive concept may, however, beembodied in many different forms and should not be construed as beinglimited to the embodiments set forth herein. Rather, these embodimentsare provided so that this disclosure will be thorough and complete andwill fully convey the concept of the invention to those skilled in theart, and the present inventive concept will only be defined by theappended claims. In the drawings, the thickness of layers and regionsare exaggerated for clarity.

It will be understood that when an element or layer is referred to asbeing “connected to,” or “coupled to” another element or layer, it canbe directly connected to or coupled to another element or layer orintervening elements or layers may be present. In contrast, when anelement is referred to as being “directly connected to” or “directlycoupled to” another element or layer, there are no intervening elementsor layers present. Like numbers refer to like elements throughout. Asused herein, the term “and/or” includes any and all combinations of oneor more of the associated listed items.

It will also be understood that when a layer is referred to as being“on” another layer or substrate, it can be directly on the other layeror substrate, or intervening layers may also be present. In contrast,when an element is referred to as being “directly on” another element,there are no intervening elements present.

It will be understood that, although the terms first, second, etc. maybe used herein to describe various elements, these elements should notbe limited by these terms. These terms are only used to distinguish oneelement from another element. Thus, for example, a first element, afirst component or a first section discussed below could be termed asecond element, a second component or a second section without departingfrom the teachings of the present inventive concept.

The use of the terms “a” and “an” and “the” and similar referents in thecontext of describing the invention (especially in the context of thefollowing claims) are to be construed to cover both the singular and theplural, unless otherwise indicated herein or clearly contradicted bycontext. The terms “comprising,” “having,” “including,” and “containing”are to be construed as open-ended terms (i.e., meaning “including, butnot limited to,”) unless otherwise noted.

Unless defined otherwise, all technical and scientific terms used hereinhave the same meaning as commonly understood by one of ordinary skill inthe art to which this invention belongs. It is noted that the use of anyand all examples, or exemplary terms provided herein is intended merelyto better illuminate the invention and is not a limitation on the scopeof the invention unless otherwise specified. Further, unless definedotherwise, all terms defined in generally used dictionaries may not beoverly interpreted.

A semiconductor device according to a first embodiment of the presentinventive concept will be described below with reference to FIGS. 1 to5.

FIG. 1 is a layout diagram for explaining a semiconductor deviceaccording to a first embodiment of the present inventive concept. FIG. 2is a cross-sectional view taken along a line A-A of FIG. 1. FIG. 3 is across-sectional view taken along a line B-B of FIG. 1. FIG. 4 is across-sectional view illustrating a region P of FIG. 1 taken along theline B-B. FIG. 5 is a diagram illustrating a configuration except afirst gate electrode or the like in FIG. 3.

Referring to FIGS. 1 to 5, a semiconductor device 1 according to a firstembodiment of the present inventive concept may include a first fin typepattern group FG1, a first gate electrode 130 or the like.

A substrate 100, for example, may be a bulk silicon or SOI(silicon-on-insulator). Alternatively, the substrate 100 may also be asilicon substrate or may contain other materials, for example, silicongermanium, indium antimonide, lead telluride, indium-arsenide, indiumphosphide, gallium arsenide or gallium antimonide. Otherwise, thesubstrate 100 may be one in which an epitaxial layer is formed on a basesubstrate.

The first fin type pattern group FG1 may be formed on the substrate 100.The first fin type pattern group FG1 may protrude from the substrate100. Here, the “fin type pattern group” may mean the fin type patterns,which intersect with one gate electrode. For example, the first fin typepattern group FG1 may be a group of fin type patterns, which intersectwith the first gate electrode 130.

The first fin type pattern group FG1 may be defined by an isolationtrench T. The isolation trench T may be disposed on either side of eachfin type pattern that is included in the first fin type pattern groupFG1.

In FIG. 3, a bottom surface of the isolation trench T is illustrated asbeing defined by the substrate 100, but is not limited thereto. When atrench deeper than the isolation trench T is formed around the first fintype pattern group FG1 and an active region is defined, the bottomsurface of the isolation trench T may not be defined by the substrate100. Otherwise, even when the fin type patterns included in the firstfin type pattern group FG1 are separated by the trench deeper than theisolation trench T, the bottom surface of the isolation trench T may notbe defined by the substrate 100.

Hereinafter, the bottom surface of the isolation trench T will bedescribed as defined by the substrate 100.

The first fin type pattern group FG1 may include fin type patterns,which extend along a first direction X. The respective fin type patternsincluded in the first fin type pattern group FG1 may be extended alongthe first direction X. The fin type patterns included in the first fintype pattern group FG1 may be disposed in a second direction Y.

The first fin type pattern group FG1 may include a first fin typepattern 110 and a second fin type pattern 120. Each of the first fintype pattern 110 and the second fin type pattern 120 may mean the fintype patterns disposed on the outermost side of the first fin typepattern group FG1. For example, the first fin type pattern group FG1 isnot located on one side of the first fin type pattern 110 in the seconddirection Y, and the fin type pattern included in the first fin typepattern group FG1 may be located on the other side of the first fin typepattern 110.

Although FIG. 1 illustrates that the first fin type pattern group FG1includes three fin type patterns, it is intended merely for convenienceof description and is not limited thereto. In other words, two or morefin type patterns may be disposed between the first fin type pattern 110and the second fin type pattern 120.

Otherwise, other fin type patterns may not be disposed between the firstfin type pattern 110 and the second fin type pattern 120. That is, thefirst fin type pattern 110 and the second fin type pattern 120 may beclosest to each other.

The first fin type pattern group FG1 may be a part of the substrate 100and may include an epitaxial layer grown from the substrate 100. Therespective fin type patterns included in the first fin type patterngroup FG1 may contain the same material each other.

The first fin type pattern group FG1, for example, may contain siliconor germanium, which is an elemental semiconductor material. The firstfin type pattern group FG1 may contain a compound semiconductor, and forexample, may contain a group IV-IV compound semiconductor or a groupIII-V compound semiconductor.

Specifically, when taking the group IV-IV compound semiconductor as anexample, the first fin type pattern group FG1 may be a binary compoundor a ternary compound containing at least two or more of carbon (C),silicon (Si), germanium (Ge) and tin (Sn), or a compound in which theseelements are doped with a group IV element.

When taking the group III-V compound semiconductor as an example, thefirst fin type pattern group FG1 may be one of a binary compound, aternary compound or a quaternary compound which is formed by binding atleast one of aluminum (Al), gallium (Ga) and indium (In) as a group IIIelement to one of phosphorus (P), arsenic (As) and anti-ammonium (Sb) asa group V element.

In the following description, the first fin type pattern group FG1, forexample, will be described as being a silicon fin type pattern groupincluding silicon.

A field insulating film 105 may be formed on the substrate 100. Thefield insulating film 105 may be formed so as to fill a part of theisolation trench T. The field insulating film 105, for example, maycontain one of an oxide film, a nitride film, an oxynitride film or acombination thereof.

The field insulating film 105 may be in contact with a part of therespective fin type patterns included in the first fin type patterngroup FG1. For example, the first fin type pattern 110 may include anupper part 112 and a lower part 111. The field insulating film 105 is incontact with the lower part 111 of the first fin type pattern, but itmay not be in contact with the upper part 112 of the first fin typepattern.

Alternatively, the first fin type pattern 110 may include a firstsidewall 110 a and a second sidewall 110 b that face each other in thesecond direction Y. The field insulating film 105 may cover a part ofthe first sidewall 110 a of the first fin type pattern and a part of thesecond sidewall 110 b of the first fin type pattern.

Thus, at least a part of the respective fin type patterns included inthe first fin type pattern group FG1 may protrude upward from the uppersurface of the field insulating film 105. For example, at least a partof the first fin type pattern 110 and the second fin type pattern 120may protrude upward from the upper surface of the field insulating film105, respectively.

The first gate electrode 130 may be formed so as to extend in the seconddirection Y and intersect with the first fin type pattern group FG1. Thefirst gate electrode 130 may be formed on the field insulating film 105.The first gate electrode 130 may intersect with the first fin typepattern 110 and the second fin type pattern 120.

In FIG. 1, the first gate electrode 130 is illustrated as being in arectangular form, but is not limited thereto. Further, when the firstgate electrode 130 is in the rectangular form, it may include a longside and a short side. Even when a corner at which the long and shortsides of the first gate electrode 130 meet is formed in a round shape,it is obvious that those skilled in the art to which the presentinventive concept pertains may distinguish between the long and shortsides.

The first gate electrode 130 may include a first terminal end 131 and asecond terminal end 132 that correspond to each other. Each of the firstterminal end 131 of the first gate electrode and the second terminal end132 of the first gate electrode may include the short side of the firstgate electrode 130. The first terminal end 131 of the first gateelectrode may be adjacent to the first fin type pattern 110, and thesecond terminal end 132 of the first gate electrode may be adjacent tothe second fin type pattern 120.

More specifically, the first terminal end 131 of the first gateelectrode may be closest to the first fin type pattern 110 of the firstfin type pattern group FG1, and the second terminal end 132 of the firstgate electrode may be closest to the second fin type pattern 120 of thefirst fin type pattern group FG1.

The first gate electrode 130 may include a first portion 130 a, a secondportion 130 b, a third portion 130 c and a fourth portion 130 d that aresequentially located in the second direction Y.

The first portion 130 a of the first gate electrode may include thefirst terminal end 131 of the first gate electrode. The fourth portion130 d of the first gate electrode may include the second terminal end132 of the first gate electrode.

The second portion 130 b of the first gate electrode and the thirdportion 130 c of the first gate electrode may be disposed between thefirst fin type pattern 110 and the second fin type pattern 120. If thereis no other fin type pattern between the first fin type pattern 110 andthe second fin type pattern 120, the second portion 130 b of the firstgate electrode and the third portion 130 c of the first gate electrodemay be the same portion.

The first portion 130 a of the first gate electrode and the secondportion 130 b of the first gate electrode may be located with the firstfin type pattern 110 interposed therebetween. Each of the first portion130 a of the first gate electrode and the second portion 130 b of thefirst gate electrode may be located on one side and the other side ofthe first fin type pattern 110.

For example, the first portion 130 a of the first gate electrode may beformed on the first sidewall 110 a of the first fin type pattern, andthe second portion 130 of the first gate electrode may be formed on thesecond sidewall 110 b of the first fin type pattern.

The second portion 130 b of the first gate electrode may be a portion,which is closest to the first portion 130 a of the first gate electrode.In other words, the first fin type pattern group FG1 except the firstfin type pattern 110 may not be disposed between the first portion 130 aof the first gate electrode and the second portion 130 b of the firstgate electrode.

A part of the first gate electrode 130 covering the upper surface of thefirst fin type pattern 110 may be located between the first portion 130a of the first gate electrode and the second portion 130 b of the firstgate electrode.

The third portion 130 c of the first gate electrode and the fourthportion 130 d of the first gate electrode may be located with the secondfin type pattern 120 interposed therebetween. Each of the third portion130 c of the first gate electrode and the fourth portion 130 d of thefirst gate electrode may be located on one side and the other side ofthe second fin type pattern 120.

The third portion 130 c of the first gate electrode may be a portionthat is closest to the fourth portion 130 d of the first gate electrode.In other words, the first fin type pattern group FG1 except the secondfin type pattern 120 may not be disposed between the third portion 130 cof the first gate electrode and the fourth portion 130 d of the firstgate electrode. A part of the first gate electrode 130 covering theupper surface of the second fin type pattern 120 may be located betweenthe third portion 130 c of the first gate electrode and the fourthportion 130 d of the first gate electrode.

The first gate electrode 130 may include metal layers MG1, MG2. Asillustrated, the first gate electrode 130 may be formed by lamination oftwo or more metal layers MG1, MG2. The first metal layer MG1 may serveto adjust the work function, and the second metal layer MG1 may serve tofill a space formed by the first metal layer MG1. For example, the firstmetal layer MG1, for example, may contain at least one of TiN, WN, TiAl,TiAlN, TaN, TiC, TaC TaCN and TaSiN or a combination thereof, but is notlimited thereto. Further, the second metal layer MG2, for example, maycontain at least one of W, Al, Cu, Co, Ti, Ta, poly-Si, SiGe or a metalalloy, but is not limited thereto.

The first gate electrode 130, for example, may be formed through areplacement process or a gate-last process, but is not limited thereto.

A first gate insulating film 145 may be formed between the first fintype pattern group FG1 and the first gate electrode 130. The first gateinsulating film 145 may be formed between the first fin type pattern 110and the first gate electrode 130 and may be formed between the secondfin type pattern 120 and the first gate electrode 130.

The first gate insulating film 145 may be formed along a profile of thefirst fin type pattern group FG1 protruding upward from the fieldinsulating film 105, for example, a profile of the first fin typepattern 110 and a profile of the second fin type pattern 120. Further,the first gate insulating film 145 may also be formed between the firstgate electrode 130 and the field insulating film 105.

The first gate insulating film 145 may contain silicon oxide, siliconoxynitride, silicon nitride and a high dielectric material having adielectric constant higher than the silicon oxide. The high dielectricmaterial may contain, but not limited to, for example, one or more ofhafnium oxide, hafnium silicon oxide, lanthanum oxide, lanthanumaluminum oxide, zirconium oxide, zirconium silicon oxide, tantalumoxide, titanium oxide, barium strontium titanium oxide, barium titaniumoxide, strontium titanium oxide, yttrium oxide, aluminum oxide, leadscandium tantalum oxide or lead zinc niobate.

A spacer 140 may be formed on the sidewall of the first gate electrode130. The spacer 140 may include a first portion 140 a formed on thesidewall including the long side of the first gate electrode 130. In thesemiconductor device according to a first embodiment of the invention,the second portion of the spacer 140 may not be formed on the sidewallincluding the short side of the first gate electrode 130.

The spacer 140 may contain, but not limited to, for example, at leastone of silicon nitride (SiN), silicon oxynitride (SiON), silicon oxide(SiO2), silicon oxycarbonitride (SiOCN) and combinations thereof.

A first source/drain 150 may be formed on both sides in the firstdirection X around the first gate electrode 130. For example, the firstsource/drain 150 may be formed on the first fin type pattern 110. Thesource/drain may also be formed on the second fin type pattern 120 andother fin type patterns included in the first fin type pattern groupFG1, respectively.

For example, when the first fin type pattern 110 is used as a channelregion of the PMOS transistor, the first source/drain 150 may contain acompressive stress material. For example, the compressive stressmaterial may be a material having a lattice constant greater than Si,and for example, may be SiGe. The compressive stress material canimprove the mobility of the carrier of the channel region by applyingthe compressive stress to the first fin type pattern 110.

Alternatively, when the first fin type pattern 110 is used as a channelregion of the NMOS transistor, the first source/drain 150 may be thesame material as the first fin type pattern 110 or a tensile stressmaterial. For example, when the first fin type pattern 110 is Si, thefirst source/drain 150 may Si or may contain a material (e.g., siliconcarbide) having a lattice constant smaller than Si.

An interlayer insulating film 180 may cover the first fin type patterngroup FG1, the first source/drain 150 or the like. The interlayerinsulating film 180 may cover the sidewall of the first gate electrode130. The interlayer insulating film 180 may be formed on the substrate100, and more specifically, on the field insulating film 105.

In FIGS. 2 to 5, although the interlayer insulating film 180 isillustrated as a single layer, it is intended merely for the convenienceof explanation and is not limited thereto. That is, it is a matter ofcourse that the interlayer insulating film 180 may be made up of aplurality of layers which includes an etching stop film, a planarizationinsulating film having etching resistance different from the etchingstop film or the like.

The interlayer insulating film 180, for example, may contain at leastone of silicon oxide, silicon nitride, silicon oxynitride and a lowdielectric constant material having the dielectric constant lower thansilicon oxide. The low dielectric constant material may contain, but notlimited to, for example, FOX (Flowable Oxide), TOSZ (Torene SilaZene),USG (Undoped Silica Glass), BSG (Borosilica Glass), PSG (PhosphoSilicaGlass), BPSG (BoroPhosphoSilica Glass), PETEOS (Plasma Enhanced TetraEthyl Ortho Silicate), FSG (Fluoride Silicate Glass), CDO (Carbon Dopedsilicon Oxide), Xerogel, Aerogel, Amorphous Fluorinated Carbon, OSG(Organo Silicate Glass), Parylene, BCB (bis-benzocyclobutenes), SiLK,polyimide, porous polymeric material or combinations thereof.

The interlayer insulating film 180 may include a first trench 135. Thefirst gate electrode 130 may be formed in the first trench 135 byfilling the first trench 135. That is, the first trench 135 may beformed so as to extend long in the second direction Y and intersect withthe first fin type pattern group FG1.

Both the field insulating film 105 and the interlayer insulating film180 formed on the substrate 100 may be an insulating film. Therefore,the first trench 135 may be formed in the insulating films 105, 180formed on the substrate 100, and more specifically, it may be formed inthe interlayer insulating film 180.

The bottom surface of the first trench 135 may be defined along theprofile of the first fin type pattern group FG1 protruding upward fromthe upper surface of the field insulating film 105, and the uppersurface of the field insulating film 105. The bottom surface of thefirst trench 135 may be uneven shape.

The sidewall of the first trench 135 facing the long side of the firstgate electrode 130 may be defined by the spacer 140. However, in thesemiconductor device 1 according to the first embodiment of the presentinventive concept, since the spacer 140 is not formed on the sidewallincluding the short side of the first gate electrode 130, the sidewallof the first trench 135 facing the short side of the first gateelectrode 130 may be defined by the interlayer insulating film 180.

In addition, the first gate insulating film 145 may be formed along thesidewall and the bottom surface of the first trench 135. The first gateinsulating film 145 may be formed between the first gate electrode 130and the interlayer insulating film 180, and between the first gateelectrode 130 and the field insulating film 105.

In the semiconductor device 1 according to the first embodiment of thepresent inventive concept, since the spacer 140 is not formed on thesidewall including the short side of the first gate electrode 130, thefirst gate insulating film 145 formed along the sidewall including theshort side of the first gate electrode 130 may be in contact with theinterlayer insulating film 180. In other words, the first gateinsulating film 145 and the interlayer insulating film 180 may be incontact with each other in the portion of first terminal end 131 of thefirst gate electrode.

A height from the substrate 100 to a lowest part of the first portion130 a of the first gate electrode may be a first height h11, a heightfrom the substrate 100 to a lowest part of the second portion 130 b ofthe first gate electrode may be a second height h12, a height from thesubstrate 100 to a lowest part of the third portion 130 c of the firstgate electrode may be a third height h13, and a height from thesubstrate 100 to a lowest part of the fourth portion 130 d of the firstgate electrode may be a fourth height h14.

In the semiconductor device according to the embodiments of the presentinventive concept, the height h11 from the substrate 100 to the lowestpart of the first portion 130 a of the first gate electrode may bedifferent from the height h12 from the substrate 100 to the lowest partof the second portion 130 b of the first gate electrode.

More specifically, the height h11 from the substrate 100 to the lowestpart of the first portion 130 a of the first gate electrode may behigher than the height h12 from the substrate 100 to the lowest part ofthe second portion 130 b of the first gate electrode.

In addition, the height h11 from the bottom surface of the isolationtrench T to the lowest part of the first portion 130 a of the first gateelectrode may be higher than the height h12 from the bottom surface ofthe isolation trench T to the lowest part of the second portion 130 b ofthe first gate electrode.

In other words, the first portion 130 a of the first gate electrode maycover a part of the first sidewall 110 a of the upper part 112 of thefirst fin type pattern that overlaps the first gate electrode 130.Meanwhile, the second portion 130 b of the first gate electrode maycover the whole second sidewall 110 b of the upper part 112 of the firstfin type pattern that overlaps the first gate electrode 130.

Also, in other words, a thickness of the first portion 130 a of thefirst gate electrode located on one side of the first fin type pattern110 may be thinner than a thickness of the second portion 130 b of thefirst gate electrode located on the other side of the first fin typepattern 110. That is, the thickness from the upper surface of the firstgate electrode 130 to the lowest part of the second portion 130 b of thefirst gate electrode may be thicker than the thickness from the uppersurface of the first gate electrode 130 to the lowest part of the firstportion 130 a of the first gate electrode.

The first trench 135 includes a first portion of the first trench 135located on one side of the first fin type pattern 110, and a secondportion of the first trench 135 located on the other side of the firstfin type pattern 110. The first gate electrode 130 may be formed byfilling the first trench 135 formed in the interlayer insulating film180.

The first portion 130 a of the first gate electrode may be formed byfilling the first portion of the first trench 135, and the secondportion 130 b of the first gate electrode may be formed by filling thesecond portion of the first trench 135.

Thus, in the semiconductor device according to the embodiments of thepresent inventive concept, a depth d1 of the first portion of the firsttrench 135 located on one side of the first fin type pattern 110 may bedifferent from a depth d2 of the second portion of the first trench 135located on the other side of the fin type pattern 110.

More specifically, the depth d1 of the first portion of the first trench135 located on one side of the first fin type pattern 110 may beshallower than the depth d2 of the second portion of the first trench135 located on the other side of the first fin type pattern 110.

A bottom surface of the first portion of the first trench 135 located onone side of the first fin pattern 110 is defined by the interlayerinsulating film 180, but a bottom surface of the second portion of thefirst trench 135 located on the other side of the first fin type pattern110 may be defined by the field insulating film 105.

Thus, a part of the interlayer insulating film 180 may be interposedbetween the lowest part of the first portion 130 a of the first gateelectrode and the field insulating film 105. However, the interlayerinsulating film 180 may not be interposed between the lowest part of thesecond portion 130 b of the first gate electrode and the fieldinsulating film 105.

In addition, a part of the first sidewall 110 a of the upper part 112 ofthe first fin type pattern is exposed by the first trench 135, and thewhole second sidewall 110 b of the upper part 112 of the first fin typepattern may be exposed by the first trench 135.

A first gate insulating film 145 formed between the first gate electrode130 and the field insulating film 105 may be formed along the sidewalland the bottom surface of the first trench 135. Thus, the first gateinsulating film 145 containing a dielectric material having thehigh-dielectric constant extends along the whole second sidewall 110 bof the upper part 112 of the first fin type pattern, but the first gateinsulating film 145 may extend along a part of the first sidewall 110 aof the upper part 112 of the first fin type pattern.

More specifically, the first gate insulating film 145 may be formedalong a part of the first sidewall 110 a of the upper part 112 of thefirst fin type pattern that overlaps the first gate electrode 130.However, the first gate insulating film 145 may be formed along thewhole second sidewall 110 b of the upper part 112 of the first fin typepattern that overlaps the first gate electrode 130.

Thus, the first gate insulating film 145 formed between the substrate100 and the first portion 130 a of the first gate electrode is not incontact with the field insulating film 105. Meanwhile, the first gateinsulating film 145 formed between the substrate 100 and the secondportion 130 b of the first gate electrode may be in contact with thefield insulating film 105.

In the semiconductor device according to the first embodiment of thepresent inventive concept, a height h13 from the substrate 100 to thelowest part of the third portion 130 c of the first gate electrode maybe substantially the same as a height h14 from the substrate 100 to thelowest part of the fourth portion 130 d of the first gate electrode.

Here, the expression “the heights are substantially the same” means thatthe heights are completely the same at the two compared positions, andtiny differences in height capable of occurring due to the degree ofrecess of the upper surface of the field insulating film 105 areincluded.

In addition, the height h13 from the bottom surface of the isolationtrench T to the lowest part of the third portion 130 c of the first gateelectrode may be substantially the same as the height h14 from thebottom surface of the isolation trench T to the lowest part of thefourth portion 130 d of the first gate electrode.

In other words, each of the third portion 130 c of the first gateelectrode and the fourth portion 130 d of the first gate electrode maycover the whole sidewall of the second fin type pattern 120 protrudingupward from the upper surface of the field insulating film 105.

The thickness of the third portion 130 c of the first gate electrodelocated on one side of the second fin type pattern 120 may besubstantially the same as the thickness of the fourth portion 130 d ofthe first gate electrode located on the other side of the second fintype pattern 120. That is, the thickness from the upper surface of thefirst gate electrode 130 to the lowest part of the third portion 130 cof the first gate electrode may be substantially the same as thethickness from the upper surface of the first gate electrode 130 to thelowest part of the fourth portion 130 d of the first gate electrode.

Here, the expression “thicknesses are substantially the same” means thatthat the heights are completely the same at the two compared positions,and tiny differences in thickness capable of occurring due to the degreeof recess of the upper surface of the field insulating film 105 areincluded.

Moreover, the interlayer insulating film 180 may not be interposedbetween the lowest part of the third portion 130 c of the first gateelectrode and the field insulating film 105, and between the lowest partof the fourth portion 130 d of the first gate electrode and the fieldinsulating film 105.

Thus, the first gate insulating film 145 formed between the substrate100 and the third portion 130 c of the first gate electrode, and betweenthe substrate 100 and the fourth portion 130 d of the first gateelectrode may be in contact with the field insulating film 105.

As illustrated in FIG. 3, the height h11 from the substrate 100 to thelowest part of the first portion 130 a of the first gate electrode maybe different from the height h14 from the substrate 100 to the lowestpart of the fourth portion 130 d of the first gate electrode.

More specifically, the height h11 from the substrate 100 to the lowestpart of the first portion 130 a of the first gate electrode may behigher than the height h14 from the substrate 100 to the lowest part ofthe fourth portion 130 d of the first gate electrode.

In other words, the thickness of the first portion 130 a of the firstgate electrode may be different from the thickness of the fourth portion130 d of the first gate electrode. More specifically, the thickness fromthe upper surface of the first gate electrode 130 to the lowest part ofthe fourth portion 130 d of the first gate electrode may be thicker thanthe thickness from the upper surface of the first gate electrode 130 tothe lowest part of the first portion 130 a of the first gate electrode.

FIG. 6 is a diagram for explaining a semiconductor device according to asecond embodiment of the present inventive concept. For convenience ofexplanation, differences from the configurations described withreference to FIGS. 1 to 5 will be mainly described.

Referring to FIG. 6, in a semiconductor device 2 according to the secondembodiment of the present inventive concept, a height h13 from thesubstrate 100 to the lowest part of the third portion 130 c of the firstgate electrode may be different from a height h14 from the substrate 100to the lowest part of the fourth portion 130 d of the first gateelectrode.

More specifically, the height h14 from the substrate 100 to the lowestpart of the fourth portion 130 d of the first gate electrode may behigher than the height h13 from the substrate 100 to the lowest part ofthe third portion 130 c of the first gate electrode.

In addition, the height h14 from the bottom surface of the isolationtrench T to the lowest part of the fourth portion 130 d of the firstgate electrode may be higher than the height h13 from the bottom surfaceof the isolation trench T to the lowest part of the third portion 130 cof the first gate electrode.

In other words, the thickness of the fourth portion 130 d of the firstgate electrode located on the other side of the second fin type pattern120 may be thinner than the thickness of the third portion 130 c of thefirst gate electrode located on one side of the second fin type pattern120.

That is, the thickness from the upper surface of the first gateelectrode 130 to the lowest part of the third portion 130 c of the firstgate electrode may be thicker than the thickness from the upper surfaceof the first gate electrode 130 to the lowest part of the fourth portion130 d of the first gate electrode.

The bottom surface of a part of the first trench 135 in which the thirdportion 130 c of the first gate electrode is formed is defined by thefield insulating film 105, but the bottom surface of the other part ofthe first trench 135 in which the fourth portion 130 d of the first gateelectrode 130 d is formed may be defined by the interlayer insulatingfilm 180.

Accordingly, a part of the interlayer insulating film 180 may beinterposed between the lowest part of the fourth portion 130 d of thefirst gate electrode and the field insulating film 105. However, theinterlayer insulating film 180 may not be interposed between the lowestpart of the third portion 130 c of the first gate electrode and thefield insulating film 105.

In addition, the first gate insulating film 145 formed between thesubstrate 100 and the fourth portion 130 d of the first gate electrodemay be not in contact with the field insulating film 105. Meanwhile, thefirst gate insulating film 145 formed between the substrate 100 and thethird portion 130 c of the first gate electrode may be in contact withthe field insulating film 105.

FIG. 6 illustrates that the height h11 from the substrate 100 to thelowest part of the first portion 130 a of the first gate electrode isdifferent from the height h14 from the substrate 100 to the lowest partof the fourth portion 130 d of the first gate electrode, but is notlimited thereto.

FIGS. 7 and 8 are diagrams for explaining a semiconductor deviceaccording to a third embodiment of the present inventive concept. Forconvenience of explanation, differences from the configurationsdescribed with reference to FIGS. 1 to 5 will be mainly described.

For reference, FIG. 7 is a cross-sectional view taken along a line B-Bof FIG. 1, and FIG. 8 is a cross-sectional view taken along a line C-Cof FIG. 1.

Referring to FIGS. 1, 7 and 8, in a semiconductor device 3 according toa third embodiment of the present inventive concept, a spacer 140 may beformed along the periphery of the first gate electrode 130. A secondportion 140 b of the spacer formed on the sidewall including the shortside of the first gate electrode 130 may be formed.

A first portion 140 a of the spacer may be formed on the sidewall of thefirst gate electrode 130 extending in the second direction Y. The secondportion 140 b of the spacer may be formed on the sidewall of the firstgate electrode 130 extending in the first direction X.

The second portion 140 b of the spacer may be formed between the firstterminal end 131 of the first gate electrode and the interlayerinsulating film 180, and between the second terminal end 132 of thefirst gate electrode and the interlayer insulating film 180.

A part of the sidewall of the first fin type pattern 110 which overlapsthe first gate electrode 130 and protrudes upward from the upper surfaceof the field insulating film 105 may not be covered with the first gateelectrode 130 and the first gate insulating film 145.

Accordingly, this second portion 140 b of the spacer may be extended tothe upper surface of the field insulating film 105 along the sidewall ofthe first fin type pattern 110 that is not covered with the first gateelectrode 130 and the first gate insulating film 145.

In addition, the sidewall of the first trench 135 may be defined by thespacer 140. More specifically, the sidewall of the first trench 135facing the long side of the first gate electrode 130 may be defined bythe first portion 140 a of the spacer. Also, the sidewall including theshort side of the first gate electrode 130 may be defined by the secondportion 140 b of the spacer.

So, the first gate insulating film 145 may be formed along the sidewallof the first portion 140 a of the spacer and the sidewall of the secondportion 140 b of the spacer.

A thickness of the first portion 140 a of the spacer may be a firstthickness t1, and a thickness of the second portion 140 b of the spacermay be a second thickness t2.

In the semiconductor device 3 according to the third embodiment of thepresent inventive concept, the thickness t1 of the first portion 140 aof the spacer and the thickness t2 of the second portion 140 b of thespacer may be different from each other. For example, the thickness t1of the first portion 140 a of the spacer may be thicker than thethickness t2 of the second portion 140 b of the spacer.

The thickness t1 of the spacer 140 formed on the sidewall including thelong side of the first gate electrode 130 may be thicker than thethickness t2 of the spacer 140 formed on the sidewall including theshort side of the first gate electrode 130.

The thickness of the spacer 140 formed on the sidewall of the first gateelectrode 130 extending in the second direction Y may be thinner thanthe thickness of the spacer 140 formed on the sidewall of the first gateelectrode 130 extending in the first direction X.

That is, the thickness of the spacer 140 at the first terminal end 131of the first gate electrode and the second terminal end 132 of the firstgate electrode may be thinner than the thickness of the spacer 140 inother portions.

FIG. 9 is a layout diagram for explaining a semiconductor deviceaccording to a fourth embodiment of the present inventive concept. FIG.10 is a cross-sectional view taken along a line A-A of FIG. 9. Forconvenience of explanation, differences from the configurationsdescribed with reference to FIGS. 1 to 5 will be mainly described.

For reference, the cross-sectional view taken along the line B-B of FIG.9 may be substantially the same as FIG. 3.

Referring to FIGS. 9 and 10, in a semiconductor device 4 according tothe fourth embodiment of the present inventive concept, an overlap widthof the first fin type pattern 110 and the first gate electrode 130 maybe smaller than the width in the first direction X of the first gateelectrode 130.

In other words, the first gate electrode 130 may be formed so as tointersect with the terminal end of the first fin type pattern 110.

Although FIG. 9 illustrates that the overlap width of the first fin typepattern group FG1 and the first gate electrode 130 except the first fintype pattern 110 is substantially the same as the width in the firstdirection X of the first gate electrode 130, it is intended merely forconvenience of description and is not limited thereto.

FIG. 11 is a layout diagram for explaining a semiconductor deviceaccording to a fifth embodiment of the present inventive concept. FIG.12 is a cross-sectional view taken along a line D-D of FIG. 11. Forconvenience of explanation, differences from the configurationsdescribed with reference to FIGS. 1 to 5 will be mainly described.

Referring to FIGS. 11 and 12, a semiconductor device 5 according to thefifth embodiment of the present inventive concept may include a firstfin type pattern group FG1, a first gate electrode 130, a second fintype pattern group FG2, a second gate electrode 230 and the like.

The second fin type pattern group FG2 may be formed on the substrate100. The second fin type pattern group FG2 may protrude from thesubstrate 100. The second fin type pattern group FG2 may be a group ofthe fin type patterns that intersect with the second gate electrode 230.

The second fin type pattern group FG2 may be defined by the isolationtrench T. The isolation trench T may be disposed on either side of eachfin type pattern included in the second fin type pattern group FG2.

In addition, the isolation trench T may be formed between the first fintype pattern group FG1 and the second fin type pattern group FG2, but isnot limited thereto. Although the first fin-type pattern group FG1 andthe second fin type pattern group FG2 may be separated by a trenchdeeper than the isolation trench T, it will be described as beingseparated by the isolation trench T below.

The second fin type pattern group FG2 may include fin type patterns thatextend along the first direction X. Each of the fin type patternsincluded in the second fin type pattern group FG2 may extend along thefirst direction X. The fin type patterns included in the second fin typepattern group FG2 may be arranged in the second direction Y.

The second fin type pattern group FG2 may include a third fin typepattern 210 that is closest to the first fin type pattern 110. Here, theexpression “the first fin type pattern 110 is closest to the third fintype pattern 210” means that the fin type pattern protruding upward fromthe upper surface of the field insulating film 105 is not disposedbetween the first fin type pattern 110 and the third fin type pattern210.

The third fin type pattern 210 may be a fin type pattern which isdisposed on the outermost side of the second fin type pattern group FG2.For example, the second fin type pattern group FG2 may not be located onone side of the second fin type pattern 120 in the second direction Y,and the fin type pattern included in the second fin type pattern groupFG2 may be located on the other side of the second fin type pattern 120.

At least a part of each fin type pattern included in the second fin typepattern group FG2 may protrude upward from the upper surface of thefield insulating film 105. For example, at least a part of the third fintype pattern 210 may protrude upward from the upper surface of the fieldinsulating film 105.

Since other descriptions of the second fin type pattern group FG2 may besubstantially similar to those of the first fin type pattern group FG1,it will not be provided below.

The second gate electrode 230 may be formed so as to extend in thesecond direction Y and intersect with the second fin type pattern groupFG2. The second gate electrode 230 may be formed on the field insulatingfilm 105. The second gate electrode 230 may intersect with the third fintype pattern 210.

Similarly to the first gate electrode 130, the second gate electrode 230may include a long side extending in the second direction Y, and a shortside extending in the first direction X.

The second gate electrode 230 may include a terminal end 231 facing thefirst terminal end 131 of the first gate electrode. The terminal end 231of the second gate electrode may include the short side of the secondgate electrode 230. The terminal end 231 of the second gate electrodemay be adjacent to the third fin type pattern 210.

The second gate electrode 230 may include a first portion 230 a and asecond portion 230 b arranged in the second direction Y. The firstportion 230 a of the second gate electrode may include the terminal end231 of the second gate electrode.

The first portion 230 a of the second gate electrode and the secondportion 230 b of the second gate electrode may be located with the thirdfin type pattern 210 interposed between. The first portion 230 a of thesecond gate electrode may be located on one side of the third fin typepattern 210, and the second portion 230 b of the second gate electrodemay be located on the other side of the third fin type pattern 210.

The second portion 230 b of the second gate electrode may be a portionthat is closest to the first portion 230 a of the second gate electrode.In other words, the second fin type pattern group FG2 except the thirdfin type pattern 210 may not be disposed between the first portion 230 aof the second gate electrode and the second portion 230 b of the secondgate electrode.

A part of the second gate electrode 230 covering the upper surface ofthe third fin type pattern 210 may be located between the first portion230 a of the second gate electrode and the second portion 230 b of thesecond gate electrode.

The second gate electrode 230 may include metal layers MG3, MG4. Asillustrated, the second gate electrode 230 may be formed by laminationof two or more metal layers MG3, MG4. Since other descriptions of thesecond gate electrode 230 may be substantially similar to those of thefirst gate electrode 130, it will not be provided below.

The second gate insulating film 245 may be formed between the secondfin-type pattern group FG2 and the second gate electrode 230. The secondgate insulating film 245 may be formed between the third fin typepattern 210 and the second gate electrode 230.

The second gate insulating film 245 may be formed along the profile ofthe second fin type pattern group FG2 protruding upward from the fieldinsulating film 105, and for example, along the profile of the third fintype pattern 210. Further, the second gate insulating film 245 may alsobe formed between the second gate electrode 230 and the field insulatingfilm 105.

FIG. 12 illustrates that the spacer is not formed on the sidewallincluding the short side of the gate electrode 230, but it is intendedmerely for the convenience of explanation and is not limited thereto.

The interlayer insulating film 180 may include a second trench 235 inwhich the second gate electrode 230 is formed. The second trench 235 maybe formed so as to extend long in the second direction Y and intersectwith the second fin type pattern group FG2.

A height from the substrate 100 to the lowest part of the first portion230 a of the second gate electrode may be a fifth height h21, and aheight from the substrate 100 to the lowest part of the second portion230 b of the second gate electrode may be a sixth height h22.

In the semiconductor device according to the fifth embodiment of theinvention, the height h21 from the substrate 100 to the lowest part ofthe first portion 230 a of the second gate electrode may besubstantially the same as the height h22 from the substrate 100 to thelowest part of the second portion 230 b of the second gate electrode.

In addition, the height h21 from the bottom surface of the isolationtrench T to the lowest part of the first portion 230 a of the secondgate electrode may be substantially the same as the height 22 from thebottom surface of the isolation trench T to the lowest part of thesecond portion 230 b of the second gate electrode.

In other words, each of the first portion 230 a of the second gateelectrode and the second portion 230 b of the second gate electrode maycover the whole sidewalls of the third fin type pattern 21 protrudingfrom the upper surface of the field insulating film 105.

The thickness of the first portion 230 a of the second gate electrodelocated on one side of the third fin type pattern 210 may besubstantially the same as the thickness of the second portion 230 b ofthe second gate electrode located on the other side of the third fintype pattern 210. That is, the thickness from the upper surface of thesecond gate electrode 230 to the lowest part of the first portion 230 aof the second gate electrode may be substantially the same as thethickness from the upper surface of the second gate electrode 230 to thelowest part of the second portion 230 b of the second gate electrode.

Also, the interlayer insulating film 180 may not be interposed betweenthe lowest part of the first portion 230 a of the second gate electrodeand the field insulating film 105, and between the lowest part of thesecond portion 230 b of the second gate electrode and the fieldinsulating film 105.

Thus, the second gate insulating film 245 formed between the substrate100 and the first portion 230 a of the second gate electrode and betweenthe substrate 100 and the second portion 230 b of the second gateelectrode may be in contact with the field insulating film 105.

In the semiconductor device according to the fifth embodiment of theinvention, the height h11 from the substrate 100 to the lowest part ofthe first portion 130 a of the first gate electrode may be differentfrom the height h21 from the substrate 100 to the lowest part of thefirst portion 230 a of the second gate electrode. For example, theheight h11 from the substrate 100 to the lowest part of the firstportion 130 a of the first gate electrode may be higher than the heighth21 from the substrate 100 to the lowest part of the first portion 230 aof the second gate electrode.

The height h11 from the bottom surface of the isolation trench T to thelowest part of the first portion 130 a of the first gate electrode maybe higher than the height h21 from the bottom surface of the isolationtrench T to the lowest part of the first portion 230 a of the secondgate electrode.

In other words, the thickness of the first portion 130 a of the firstgate electrode may be different from the thickness of the first portion230 a of the second gate electrode.

More specifically, the thickness from the upper surface of the secondgate electrode 230 to the lowest part of the first portion 230 a of thesecond gate electrode may be thicker than the thickness from the uppersurface of the first gate electrode 130 to the lowest part of the firstportion 130 a of the first gate electrode.

FIG. 13 is a diagram for explaining a semiconductor device according toa sixth embodiment of the present inventive concept. For convenience ofexplanation, differences from the configurations described withreference to FIGS. 11 and 12 will be mainly described.

Referring to FIG. 13, in a semiconductor device 6 according to the sixthembodiment of the present inventive concept, a height h21 from thesubstrate 100 to the lowest part of the first portion 230 a of thesecond gate electrode may be higher than a height h22 from the substrate100 to the lowest part of the second portion 230 b of the second gateelectrode.

The height h21 from the bottom surface of the isolation trench T to thelowest part of the first portion 230 a of the second gate electrode maybe higher than the height h22 from the bottom surface of the isolationtrench T to the lowest part of the second portion 230 b of the secondgate electrode.

Further, the thickness of the first portion 230 a of the second gateelectrode located on one side of the third fin type pattern 210 may bethinner than the thickness of the second portion 230 b of the secondgate electrode located on the other side of the third fin type pattern210.

The bottom surface of a part of the second trench 235 in which thesecond portion 230 b of the second gate electrode is formed is definedby the field insulating film 105, but the bottom surface of the otherpart of the second trench 235 in which the first portion 230 a of thesecond gate electrode is formed may be defined by the interlayerinsulating film 180.

Thus, a part of the interlayer insulating film 180 may be interposedbetween the lowest part of the first portion 230 a of the second gateelectrode and the field insulating film 105. However, the interlayerinsulating film 180 may not be interposed between the lowest part of thesecond portion 230 b of the second gate electrode and the fieldinsulating film 105.

In addition, the second gate insulating film 245 formed between thesubstrate 100 and the first portion 230 a of the second gate electrodemay not be in contact with the field insulating film 105. Meanwhile, thesecond gate insulating film 245 formed between the substrate 100 and thesecond portion 230 b of the second gate electrode may be in contact withthe field insulating film 105.

In the semiconductor device according to the sixth embodiment of theinvention, the height h11 from the substrate 100 to the lowest part ofthe first portion 130 a of the first gate electrode may be differentfrom the height h21 from the substrate 100 to the lowest part of thefirst portion 230 a of the second gate electrode.

FIG. 14 is a diagram for explaining a semiconductor device according toa seventh embodiment of the present inventive concept. For convenienceof explanation, differences from the configurations described withreference to FIG. 13 will be mainly described.

Referring to FIG. 14, in a semiconductor device 7 according to theseventh embodiment of the present inventive concept, a height h11 fromthe substrate 100 to the lowest part of the first portion 130 a of thefirst gate electrode may be substantially the same as a height h21 fromthe substrate 100 to the lowest part of the first portion 230 a of thesecond gate electrode.

The height h21 from the bottom surface of the isolation trench T to thelowest part of the first portion 230 a of the second gate electrode maybe substantially the same as the height h11 from the bottom surface ofthe isolation trench T to the lowest part of the first portion 130 a ofthe first gate electrode.

FIG. 15 is a circuit diagram for explaining a semiconductor deviceaccording to an eighth embodiment of the present inventive concept. FIG.16 is a layout diagram of the semiconductor device of FIG. 15.

Referring to FIG. 15, the semiconductor device may include a pair ofinverters INV1, INV2 connected in parallel between a power supply nodeVcc and a ground node Vss, and a first pass transistor PS1 and a secondpass transistor PS2 connected to an output node of each of the invertersINV1, INV2. Each of the first pass transistor PS1 and the second passtransistor PS2 may be connected to a bit line BL and a complementary bitline/BL. The gates of the first pass transistor PS1 and the second passtransistor PS2 may be connected to a word line WL.

The first inverter INV1 includes a first pull-up transistor PU1 and afirst pull-down transistor PD1 which are connected to each other inseries, and the second inverter INV2 includes a second pull-uptransistor and PU2 and a second pull-down transistor PD2 which areconnected to each other in series. The first pull-up transistor PU1 andthe second pull-up transistor PU2 may be a PFET transistor, and thefirst pull-down transistor PD1 and the second pull-down transistor PD2may be an NFET transistor.

Further, in order for the first inverter INV1 and the second inverterINV2 to constitute a latch circuit, the input node of the first inverterINV1 is connected to the output node of the second inverter INV2, andthe input node of the second inverter INV2 is connected to the outputnode of the first inverter INV1.

Here, referring to FIGS. 15 and 16, a first active fin 310, a secondactive fin 320, a third active fin 330 and a fourth active fin 340spaced apart from each other are formed so as to extend long in onedirection (e.g., a vertical direction of FIG. 16). The extension lengthof the second active fin 320 and the third active fin 330 may be shorterthan that of the first active fin 310 and the fourth active fin 340.

Further, a first gate line 351, a second gate line 352, a third gateline 353 and a fourth gate line 354 extend long in the other direction(e.g., in a horizontal direction of FIG. 16) and are formed so as tointersect with the first active fin 310 to the fourth active fin 340.

Specifically, the first gate line 351 may completely intersect with thefirst active fin 310 and the second active fin 320 and may partiallyoverlap the terminal end of the third active fin 330. The third gateline 353 may completely intersect with the fourth active fin 340 and thethird active fin 330 and may partially overlap the terminal end of thesecond active fin 320. Each of the second gate line 352 and the fourthgate line 354 is formed so as to intersect with the first active fin 310and the fourth active fin 340.

As illustrated, the first pull-up transistor PU1 is defined around aregion in which the first gate line 351 intersects with the secondactive fin 320, the first pull-down transistor PD1 is defined around aregion in which the first gate line 351 intersects with the first activefin 310, and the first pass transistor PS1 is defined around a region inwhich the second gate line 352 intersects with the first active fin 310.

The second pull-up transistor PU2 is defined around a region in whichthe third gate line 353 intersects with the third active fin 330, thesecond pull-down transistor PD2 is defined around a region in which thethird gate line 353 intersects with the fourth active fin 340, and thesecond pass transistor PS2 is defined around a region in which thefourth gate line 354 intersects with the fourth active fin 340.

Although it is not clearly illustrated, on both sides of the region inwhich the first to fourth gate lines 351 to 354 intersect with the firstto fourth active fins 310, 320, 330, 340, the source/drain may beformed, and a large number of contacts 350 may be formed.

Furthermore, a first shared contact 361 connects the second active fin320, the third gate line 353 and the wiring 371 at the same time. Asecond shared contact 362 connects the third active fin 330, the firstgate line 351 and the wiring 372 at the same time.

At least one of the semiconductor devices according to theabove-described embodiments of the present inventive concept may beadopted to such a SRAM layout, and for example, may be adopted to aportion Q or the like of FIG. 16.

FIG. 17 is a block diagram of a SoC system including the semiconductordevice according to the embodiments of the present inventive concept.

Referring to FIG. 17, the SoC system 1000 includes an applicationprocessor 1001 and a DRAM 1060.

The application processor 1001 may include a central processing unit1010, a multimedia system 1020, a bus 1030, a memory system 1040 and aperipheral circuit 1050.

The central processing unit 1010 may perform the operations necessaryfor driving of the SoC system 1000. In some embodiments of the presentinventive concept, the central processing unit 1010 may be configured ina multi-core environment which includes a plurality of cores.

The multimedia system 1020 may be used to perform a variety ofmultimedia functions in the SoC system 1000. The multi-media system 1020may include a 3D engine module, a video codec, a display system, acamera system, a post-processor and the like.

The bus 1030 may be used to perform the data communication among thecentral processing unit 1010, the multimedia system 1020, the memorysystem 1040 and the peripheral circuits 1050 each other. In someembodiments of the present inventive concept, the bus 1030 may have amultilayer structure. Specifically, as examples of the bus 1030, amulti-layer AHB (multi-layer Advanced High-performance Bus) or amulti-AXI (multi-layer Advanced eXtensible Interface) may be used, butthe invention is not limited thereto.

The memory system 1040 may provide the necessary environment in whichthe application processor 1001 is connected to an external memory (e.g.,a DRAM 1060) to perform the high-speed operation. In some embodiments ofthe present inventive concept, the memory system 1040 may includeanother controller (e.g., a DRAM controller) for controlling theexternal memory (e.g., the DRAM 1060).

The peripheral circuits 1050 may provide a necessary environment inwhich the SoC system 1000 is connected to an external device (e.g., amain board). Thus, the peripheral circuit 1050 may be provided withvarious interfaces which allow the external device connected to the SoCsystem 1000 to be compatible.

The DRAM 1060 may function as an operating memory required for operationof the application processor 1001. In some embodiments of the presentinventive concept, as illustrated, the DRAM 1060 may be located outsidethe application processor 1001. Specifically, the DRAM 1060 may bepackaged with the application processor 1001 in the form of PoP (Packageon Package).

At least one of the components of the SoC system 1000 may include atleast one of the semiconductor devices according to the above-describedembodiments of the present inventive concept.

FIG. 18 is a block diagram of an electronic system including thesemiconductor device according to the embodiments of the presentinventive concept.

Referring to FIG. 18, an electronic system 1100 according to anembodiment of the present inventive concept may include a controller1110, an input-output device (I/O) 1120, a memory device 1130, aninterface 1140 and a bus 1150. The controller 1110, the input/outputdevice 1120, the memory device 1130 and/or the interface 1140 may becoupled together via the bus 1150. The bus 1150 corresponds to a path inwhich the data are moved.

The controller 1110 may include at least one of a microprocessor, adigital signal process, a microcontroller, and logic elements capable ofperforming the function similar to these elements. The input/outputdevice 1120 may include a keypad, a keyboard, a display device and thelike. The memory device 1130 may store data and/or instruction words.The interface 1140 may perform the functions of transferring the data tothe communication network or receiving the data from the communicationnetwork. The interface 1140 may be in a wired or wireless form. Forexample, the interface 1140 may include an antenna or a wired andwireless transceiver.

Although it is not illustrated, the electronic system 1100 may furtherinclude a high-speed DRAM and/or SDRAM as an operation memory forimproving the operation of the controller 1110.

The semiconductor devices according to the above-mentioned embodimentsof the present inventive concept may be provided inside the memorydevice 1130 or may be provided as a part of the controller 1110, theinput/output device (I/O) 1120 or the like.

The electronic system 1100 may be applied to a personal digitalassistant (PDA), a portable computer, a web tablet, a wireless phone, amobile phone, a digital music player, a memory card or all electronicproducts that may transmit and/or receive information in a wirelessenvironment.

FIGS. 19 to 21 are exemplary semiconductor systems to which thesemiconductor devices according to some embodiments of the presentinventive concept may be applied.

FIG. 19 is a diagram illustrating a tablet PC 1200, FIG. 20 is a diagramillustrating a laptop computer 1300, and FIG. 21 is a diagramillustrating a smart phone 1400. The semiconductor devices according tothe embodiments of the present inventive concept may be used in thetablet PC 1200, the laptop computer 1300, the smart phone 1400 or thelike.

Further, it will be apparent to those skilled in the art that thesemiconductor devices according to some embodiments of the presentinventive concept may also be applied to other integrated circuitdevices that are not illustrated.

That is, although only the tablet PC 1200, the laptop computer 1300 andthe smart phone 1400 are adopted as an example of the semiconductorsystem according to this embodiment above, the example of thesemiconductor system according to this embodiment is not limitedthereto.

In some embodiments of the present inventive concept, the semiconductorsystem may be achieved by a computer, a ultra mobile PC (UMPC), aworkstation, a net-book, personal digital assistants (PDA), a portablecomputer, a wireless phone, a mobile phone, an e-book, a portablemultimedia player (PMP), a portable game machine, a navigation device, ablack box, a digital camera, a 3-dimensional television, a digital audiorecorder, a digital audio player, a digital picture recorder, a digitalpicture player, a digital video recorder, a digital video player or thelike.

While the present inventive concept has been particularly shown anddescribed with reference to exemplary embodiments thereof, it will beunderstood by those of ordinary skill in the art that various changes inform and details may be made therein without departing from the spiritand scope of the present inventive concept as defined by the followingclaims. It is therefore desired that the present embodiments beconsidered in all respects as illustrative and not restrictive,reference being made to the appended claims rather than the foregoingdescription to indicate the scope of the invention.

What is claimed is:
 1. A semiconductor device comprising: a fieldinsulating film on a substrate; a first fin type pattern which protrudesupward from an upper surface of the field insulating film on thesubstrate and extends a first direction; a gate electrode which includesa first sidewall and a second sidewall opposing each other in the firstdirection and extends a second direction different from the firstdirection, wherein the gate electrode includes a first portion and asecond portion, the first portion being located on one side of the firstfin type pattern and including a first terminal end of the gateelectrode, and the second portion being located on the other side of thefirst fin type pattern; and an interlayer insulating film on the fieldinsulating film, wherein a portion of the interlayer insulating film isinterposed between the first portion of the gate electrode and an uppersurface of the field insulating film, wherein the first fin type patternincludes a third sidewall disposed between the first sidewall of thegate electrode and the second sidewall of the gate electrode, whereinthe third sidewall of the first fin type pattern extends in the seconddirection and connects the one side of the first fin type pattern andthe other side of the first fin type pattern, wherein a distance,measured in the first direction, between the first sidewall and thethird sidewall is different from a distance, measured in the firstdirection, between the second sidewall and the third sidewall, andwherein a distance from an upper surface of the gate electrode to alowest part of the first portion of the gate electrode is different froma distance from the upper surface of the gate electrode to a lowest partof the second portion of the gate electrode.
 2. The semiconductor deviceof claim 1, wherein the second sidewall of the gate electrode intersectswith the first fin type pattern, and wherein the distance between thesecond sidewall of the gate electrode and the third sidewall of thefirst fin type pattern is greater than the distance between the firstsidewall of the gate electrode and the third sidewall of the first fintype pattern.
 3. The semiconductor device of claim 1, furthercomprising: a gate insulating film formed along a profile of the firstfin type pattern between the gate electrode and the substrate, wherein apart of the third sidewall is contact with the field insulating film. 4.The semiconductor device of claim 3, wherein a lower part of the thirdsidewall is contact with the field insulating film, and an upper part ofthe third sidewall is contact with the gate insulating film.
 5. Thesemiconductor device of claim 1, wherein the distance from the uppersurface of the gate electrode to a lowest part of the first portion ofthe gate electrode is less than the distance from the upper surface ofthe gate electrode to a lowest part of the second portion of the gateelectrode.
 6. The semiconductor device of claim 1, further comprising: agate insulating film formed along a profile of the first fin typepattern between the gate electrode and the substrate, wherein the gateinsulating film between the second portion and the substrate is incontact with the field insulating film, and wherein portions of the gateinsulating film between the first portion and the substrate are not incontact with the field insulating film.
 7. The semiconductor device ofclaim 6, further comprising: an interlayer insulating film on the fieldinsulating film, wherein the gate insulating film is formed between theinterlayer insulating film and the gate electrode, and wherein the gateinsulating film is in contact with the interlayer insulating film in thefirst terminal end.
 8. The semiconductor device of claim 1, furthercomprising a trench which defines the first fin type pattern, wherein aheight from a bottom surface of the trench to the lowest part of thefirst portion is higher than a height from the bottom surface of thetrench to the lowest part of the second portion.
 9. The semiconductordevice of claim 1, further comprising: a second fin type pattern whichintersects with the gate electrode, wherein the gate electrode includesa fifth portion, a sixth portion, and a second terminal endcorresponding to the first terminal end, wherein the fifth portion isdisposed between the first fin type pattern and the second fin typepattern, and wherein the sixth portion includes the second terminal endof the gate electrode.
 10. The semiconductor device of claim 9, whereina distance from the upper surface of the gate electrode to a lowest partof the fifth portion of the gate electrode is substantially the same asa distance from the upper surface of the gate electrode to a lowest partof the sixth portion of the gate electrode.
 11. The semiconductor deviceof claim 1, further comprising: an interlayer insulating film on thefield insulating film; and a spacer formed between the interlayerinsulating film and the first terminal end of the gate electrode.
 12. Asemiconductor device comprising: a fin type pattern which includes alower part and an upper part on a substrate, the fin type patternincluding a first sidewall, a second sidewall and a third sidewall, thefirst sidewall and the second sidewall opposing each other, and thethird sidewall connected to the first sidewall and the second sidewall;a field insulating film which is in contact with the lower part of thefin type pattern on the substrate and is not in contact with the upperpart of the fin type pattern; and a gate electrode which intersects withthe fin type pattern, and includes a first portion, a second portion anda third portion, the first portion being located on the first sidewallof the fin type pattern, the second portion being located on the secondsidewall of the fin type pattern, and the third portion being located onthe third sidewall of the fin type pattern, wherein the first portioncovers the whole first sidewall of the upper part of the fin typepattern which overlaps the gate electrode, the second portion covers apart of the second sidewall of the upper part of the fin type patternwhich overlaps the gate electrode, and the third portion covers thewhole third sidewall of the upper part of the fin type pattern whichoverlaps the gate electrode.
 13. The semiconductor device of claim 12,wherein a distance from the third sidewall to the gate electrodeoverlapping the fin type pattern is different a distance from the thirdsidewall to the gate electrode not overlapping the fin type pattern. 14.The semiconductor device of claim 13, wherein the distance from thethird sidewall to the gate electrode overlapping the fin type pattern isgreater than the distance from the third sidewall to the gate electrodenot overlapping the fin type pattern.
 15. The semiconductor device ofclaim 12, wherein the second portion includes a terminal end of the gateelectrode.
 16. The semiconductor device of claim 12, further comprising:an interlayer insulating film on the field insulating film, wherein apart of the interlayer insulating film is interposed between the secondportion and the field insulating film, and wherein the interlayerinsulating film is not interposed between the first portion and thefield insulating film, and the third portion and the field insulatingfilm.
 17. The semiconductor device of claim 12, further comprising: agate insulating film formed along a profile of the fin type patternbetween the fin type pattern and the gate electrode, wherein the gateinsulating film extends along the whole first sidewall of the upper partof the fin type pattern, extends along a part of the second sidewall ofthe upper part of the fin type pattern, and extends along the wholethird sidewall of the upper part of the fin type pattern.
 18. Asemiconductor device comprising: a field insulating film on a substrate;a first fin type pattern which is formed on the substrate and protrudesupward from an upper surface of the field insulating film; and a gateelectrode which intersects with the first fin type pattern on the fieldinsulating film and includes a first portion, a second portion, a thirdportion and a fourth portion, the first portion being located on oneside of the first fin type pattern and including a first terminal end ofthe gate electrode, the second portion being located on the other sideof the first fin type pattern, the third portion being located on anupper surface of the first fin type pattern, and the fourth portionbeing located on an upper surface of the field insulating film betweenthe first portion to the third portion, wherein a distance from an uppersurface of the gate electrode to a lowest part of the first portion ofthe gate electrode is different from a distance from the upper surfaceof the gate electrode to a lowest part of the first second portion ofthe gate electrode, and wherein a distance from the upper surface of thegate electrode to a lowest part of the third portion of the gateelectrode is different from a distance from the upper surface of thegate electrode to a lowest part of the fourth portion of the gateelectrode.
 19. The semiconductor device of claim 18, wherein thedistance from the upper surface of the gate electrode to the lowest partof the first portion of the gate electrode is less than the distancefrom the upper surface of the gate electrode to the lowest part of thesecond portion of the gate electrode, and wherein the distance from theupper surface of the gate electrode to the lowest part of the thirdportion of the gate electrode is less than the distance from the uppersurface of the gate electrode to the lowest part of the fourth portionof the gate electrode.
 20. The semiconductor device of claim 18, furthercomprising: an interlayer insulating film on the field insulating film,wherein a part of the interlayer insulating film is interposed betweenthe first portion and the field insulating film, and wherein theinterlayer insulating film is not interposed between the second portionand the field insulating film, between the third portion and the fieldinsulating film, and between the fourth portion and the field insulatingfilm.